ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,966, issued on June 9, was assigned to NEC Corp. (Tokyo). "Quantum device and its manufacturing method" was invented by Tetsuro Sato (Tokyo)... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,967, issued on June 9, was assigned to Intel Corp. (Santa Clara, Calif.). "Technologies for semiconductor devices including amorphous silico... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,968, issued on June 9, was assigned to SK HYNIX INC. (Icheon-si, South Korea). "Semiconductor device" was invented by Jeong Hwan Song (Icheo... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,969, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Confined phase-change memory cell with self-al... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,970, issued on June 9, was assigned to New Jersey Institute of Technology (Newark, N.J.). "Resistive switching in a RRAM device" was invente... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,971, issued on June 9, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Piezoresistive transistor device and power electronic... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,972, issued on June 9, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Field suppressed metal gapfill" was invented by Annama... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,973, issued on June 9, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Delayed pulsing for plasma processing of wafers" was i... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,974, issued on June 9, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Methods and systems for forming a layer comprising silico... Read More
ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,975, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Semiconductor device" was invented by Yasuyuki Hoshi (Mats... Read More