ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,975, issued on June 9, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan).
"Semiconductor device" was invented by Yasuyuki Hoshi (Matsumoto-city, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device has a semiconductor base substrate, a first electrode disposed on the surface of the semiconductor base substrate, a protective film covering an end portion of the first electrode, and a second electrode disposed on the first electrode, in an opening of the protective film. The protective film has an end portion where the protective film and the second electrode overlap. In a plan view of the semiconductor device, the end port...