ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,969, issued on June 9, was assigned to International Business Machines Corp. (Armonk, N.Y.).

"Confined phase-change memory cell with self-aligned electrode and reduced thermal loss" was invented by Kangguo Cheng (Schenectady, N.Y.), Juntao Li (Cohoes, N.Y.), Julien Frougier (Albany, N.Y.) and Ruilong Xie (Niskayuna, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A confined phase-change memory cell with self-aligned electrode includes a first conductive structure within a first dielectric layer. A phase-change memory pillar including a first portion of a phase-change material is confined within a second dielectric layer and electrically connected...