US Patent Issued to Intel on June 9 for "Technologies for semiconductor devices including amorphous silicon" (New Mexico Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,967, issued on June 9, was assigned to Intel Corp. (Santa Clara, Calif.).

"Technologies for semiconductor devices including amorphous silicon" was invented by Luca Fumagalli (Rio Rancho, N.M.), Errol Todd Ryan (Albuquerque, N.M.), Jing Yuwen (Albuquerque, N.M.) and David M. Fryauf (Rio Rancho, N.M.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Techniques for semiconductor devices including amorphous silicon are disclosed. In the illustrative embodiment, trenches are etched through several layers of a memory during manufacture, including through a phase-change layer. To protect the phase-change layer during further processing steps, amorphous silicon...