US Patent Issued to Infineon Technologies on June 9 for "Piezoresistive transistor device and power electronic module including a piezoresistive transistor device" (Austrian, German Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,652,971, issued on June 9, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Piezoresistive transistor device and power electronic module including a piezoresistive transistor device" was invented by Saurabh Roy (Villach, Austria), Josef Anton Moser (Sattendorf, Austria) and Hans-Joachim Schulze (Taufkirchen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A piezoresistive transistor device includes a first transistor cell having a first piezoelectric material body and a first piezoresistive material body arranged in a stacked configuration. A first electrical resistance of the first piezoresistive material body is dependent upon a v...