US Patent Issued to Sandisk Technologies on June 2 for "Techniques for faster ramp-up times for unselected word lines in non-volatile memory" (Indian Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,567, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Techniques for faster ramp-up times for unselected wor... Read More

US Patent Issued to SAMSUNG ELECTRONICS on June 2 for "Storage device for selectively performing high-reliability program operation according to temperature, and operation method of the storage device" (South Korean Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,568, issued on June 2, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Storage device for selectively performing high... Read More

US Patent Issued to Sandisk Technologies on June 2 for "Suspend-resume-go techniques for memory devices" (American, Indian Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,569, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Suspend-resume-go techniques for memory devices" was i... Read More

US Patent Issued to Silicon Motion on June 2 for "Method and apparatus for reading data stored in flash memory by referring to binary digit distribution characteristics of bit sequences read from flash memory" (Taiwanese Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,570, issued on June 2, was assigned to Silicon Motion Inc. (Hsinchu County, Taiwan). "Method and apparatus for reading data stored in flash ... Read More

US Patent Issued to Shanghai Hauli Integrated Circuit on June 2 for "Memory circuit with differential sensing architecture" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,571, issued on June 2, was assigned to Shanghai Hauli Integrated Circuit Corp. (Shanghai). "Memory circuit with differential sensing archite... Read More

US Patent Issued to Yangtze Memory Technologies on June 2 for "Voltage control in memory devices" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,572, issued on June 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Voltage control in memory devices" was invented... Read More

US Patent Issued to Micron Technology on June 2 for "Read voltage level bin selection" (American, Italian Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,573, issued on June 2, was assigned to Micron Technology Inc. (Boise, Idaho). "Read voltage level bin selection" was invented by Eric N. Lee... Read More

US Patent Issued to Kioxia on June 2 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,574, issued on June 2, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device" was invented by Akiyuki Murayama (Koto, Japan), Y... Read More

US Patent Issued to Sandisk Technologies on June 2 for "String based erase inhibit for one sided gate-induced drain leakage erase" (Chinese, American Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,575, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "String based erase inhibit for one sided gate-induced ... Read More

US Patent Issued to Sandisk Technologies on June 2 for "Bitscan techniques in a memory device" (Japanese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,576, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.). "Bitscan techniques in a memory device" was invented by... Read More

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