US Patent Issued to Sandisk Technologies on June 2 for "String based erase inhibit for one sided gate-induced drain leakage erase" (Chinese, American Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,575, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"String based erase inhibit for one sided gate-induced drain leakage erase" was invented by Ming Wang (Shanghai), Liang Li (Shanghai) and Jiahui Yuan (Fremont, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory apparatus includes memory cells configured to store a threshold voltage and disposed in memory holes each defining a channel. The memory apparatus also includes a control means configured to apply a first erase voltage to the channel of each of the memory holes including the memory cells in a first loop of an erase operation. The control means veri...