US Patent Issued to Micron Technology on June 2 for "Read voltage level bin selection" (American, Italian Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,573, issued on June 2, was assigned to Micron Technology Inc. (Boise, Idaho).

"Read voltage level bin selection" was invented by Eric N. Lee (San Jose, Calif.), Violante Moschiano (Avezzano, Italy), Jeffrey S. McNeil (Nampa, Idaho), James Fitzpatrick (Laguna Niguel, Calif.), Sivagnanam Parthasarathy (Carlsbad, Calif.), Kishore Kumar Muchherla (Fremont, Calif.) and Patrick R. Khayat (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "Processing logic in a memory device receives a calibration scan command associated with the memory device. In response to the calibration scan command, execution of a set of read operations at a plurality of read vo...