US Patent Issued to Sandisk Technologies on June 2 for "Techniques for faster ramp-up times for unselected word lines in non-volatile memory" (Indian Inventor)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,567, issued on June 2, was assigned to Sandisk Technologies Inc. (Milpitas, Calif.).

"Techniques for faster ramp-up times for unselected word lines in non-volatile memory" was invented by Sajal Khanna (Bangalore, India).

According to the abstract* released by the U.S. Patent & Trademark Office: "In a non-volatile memory array such as a NAND memory, when a word line of a block is selected for a read or write, the selected word line is biased at one level through one decoding path, while the unselected word lines of a block are biased at a different level though another decoding path. For memory operations, such as leakage detection, in which all of the word lines are biased with th...