US Patent Issued to Yangtze Memory Technologies on June 2 for "Voltage control in memory devices" (Chinese Inventors)

ALEXANDRIA, Va., June 2 -- United States Patent no. 12,646,572, issued on June 2, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China).

"Voltage control in memory devices" was invented by Yiqun Cen (Wuhan, China), Li Xiang (Wuhan, China) and Ruxin Wei (Wuhan, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "Memory devices, circuits, and methods for voltage control in memory devices are provided. One example method includes adjusting a rate of change of a reference voltage based on a step voltage and a step time duration, where adjusting the rate of change of the reference voltage includes changing the reference voltage by the step voltage over a time period that equals the step time durati...