ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,852, issued on May 26, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China). "High electron mobility transistor and manufacturing... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,853, issued on May 26, was assigned to Wolfspeed Inc. (Durham, N.C.). "Gate trench power semiconductor devices having improved breakdown per... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,854, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device having impro... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,855, issued on May 26, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Regulated mobile ion synapses" was invented by... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,857, issued on May 26, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor device with recessed gate and method... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,858, issued on May 26, was assigned to FUJI ELECTRIC Co. LTD. (Kanagawa, Japan). "IGBT cells with floating mesa" was invented by Yoshihiro I... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,860, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Device with modified work function la... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,861, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Methods of reducing capacitance in fi... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,862, issued on May 26, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.). "Three-dimensional cross field effect self-aligned... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,863, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor transistor structur... Read More