US Patent Issued to Huawei Technologies'Co., 'Ltd.' on May 26 for "High electron mobility transistor and manufacturing method thereof, chip, and electronic device" (Chinese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,852, issued on May 26, was assigned to Huawei Technologies'Co.'Ltd.' (Shenzhen, China).

"High electron mobility transistor and manufacturing method thereof, chip, and electronic device" was invented by Zhili Zhang (Suzhou, China), Jin Rao (Shanghai), Tao Liu (Shanghai), Haijun Li (Suzhou, China), Wei Lu (Shanghai), Shuiming Li (Suzhou, China), Cen Tang (Suzhou, China), Qiang He (Suzhou, China), Juncai Ma (Suzhou, China), Chunhua Fan (Suzhou, China) and Yangyi Zhu (Shenzhen, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The technology of this application relates to a high electron mobility transistor including a GaN substrate layer, a barrier l...