US Patent Issued to Advanced Micro Devices on May 26 for "Three-dimensional cross field effect self-aligned transistors with frontside and backside power connections" (Colorado Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,862, issued on May 26, was assigned to Advanced Micro Devices Inc. (Santa Clara, Calif.).

"Three-dimensional cross field effect self-aligned transistors with frontside and backside power connections" was invented by Richard T. Schultz (Ft. Collins, Colo.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An apparatus and method for efficiently routing power signals across a semiconductor die. In various implementations, an integrated circuit uses Cross field effect transistors (FETs) with a first device, such as n-type device, having a first channel oriented in a first direction and connected to a ground reference voltage level provided by a backside met...