US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Semiconductor device having improved gate stacks and methods of fabrication thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,854, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device having improved gate stacks and methods of fabrication thereof" was invented by Cheng-Wei Chang (Taipei City, Taiwan), Shahaji B. More (Hsinchu, Taiwan), Chi-Yu Chou (Hsinchu, Taiwan) and Yueh-Ching Pai (Taichung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device structure is provided. The semiconductor device structure includes one or more semiconductor layers, an interfacial layer surrounding at least one semiconductor layer of the one or more semiconductor layers, a work function metal disp...