US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 26 for "Semiconductor transistor structure including protection layers over isolation structure and method for forming the same" (Taiwanese Inventor)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,863, issued on May 26, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor transistor structure including protection layers over isolation structure and method for forming the same" was invented by Chih-Yang Chen (Hsinchu City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method for forming a semiconductor structure is provided. The method includes forming active regions over a substrate, forming an isolation structure to surround lower portions of the active regions, forming dummy gate structures across the active regions and the isolation structure, forming a spacer layer along the dummy gate...