ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,787, issued on May 26, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device and method of manufacturing semiconductor memory d... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,788, issued on May 26, was assigned to Micron Technology Inc. (Boise, Idaho). "Integrated circuitry, memory arrays comprising strings of mem... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,789, issued on May 26, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Three-dimensional NAND memory device and method... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,790, issued on May 26, was assigned to Samsung Electronics Co. Ltd. (Suwon-si, South Korea). "Three-dimensional semiconductor memory device ... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,791, issued on May 26, was assigned to SK hynix Inc. (Gyeonggi-do, South Korea). "Semiconductor device and manufacturing method thereof" was... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,792, issued on May 26, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan). "Method for manufacturing three-dimensional memory... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,793, issued on May 26, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Nonvolatile memory device" was invented by Min... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,794, issued on May 26, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor device including ferroelectric layer and metho... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,795, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Ferroelectric memory device and semic... Read More
ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,796, issued on May 26, was assigned to INSTITUTE OF MICROELECTRONICS, CHINESE ACADEMY OF SCIENCES (Beijing). "Nor-type memory device, method... Read More