US Patent Issued to Samsung Electronics on May 26 for "Three-dimensional semiconductor memory device with diffusion stop layer and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,790, issued on May 26, was assigned to Samsung Electronics Co. Ltd. (Suwon-si, South Korea).

"Three-dimensional semiconductor memory device with diffusion stop layer and electronic system including the same" was invented by Sangmin Kang (Suwon-si, South Korea), Bio Kim (Seoul, South Korea), Hyung Joon Kim (Pyeongtaek-si, South Korea) and Kyungwook Park (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are 3D semiconductor memory devices and electronic systems including the same. The 3D semiconductor memory device comprises a stack structure including interlayer dielectric layers and gate electrodes that are alternately a...