US Patent Issued to Taiwan Semiconductor Manufacturing on May 26 for "Ferroelectric memory device and semiconductor die" (Taiwanese Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,795, issued on May 26, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Ferroelectric memory device and semiconductor die" was invented by Ya-Ling Lee (Hsinchu, Taiwan), Chung-Te Lin (Tainan, Taiwan), Han-Ting Tsai (Kaoshiung, Taiwan), Wei-Gang Chiu (New Taipei City, Taiwan), Yen-Chieh Huang (Hsinchu, Taiwan) and Ming-Yi Yang (Hsin-Chu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A ferroelectric memory device and a semiconductor die are provided. The ferroelectric memory device includes a gate electrode; a channel layer, overlapped with the gate electrode; source/drain contacts, in contact with separate ends o...