US Patent Issued to Micron Technology on May 26 for "Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells" (Idaho, Oregon Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,788, issued on May 26, was assigned to Micron Technology Inc. (Boise, Idaho).

"Integrated circuitry, memory arrays comprising strings of memory cells, methods used in forming integrated circuitry, and methods used in forming a memory array comprising strings of memory cells" was invented by Adam Barton (Boise, Idaho), David H. Wells (Boise, Idaho), Pengyuan Zheng (Boise, Idaho) and Amritesh Rai (Tigard, Ore.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method used in forming a memory array comprises forming a stack comprising vertically-alternating insulative tiers and conductive tiers. Channel-material strings of memory-cell strings extend throu...