US Patent Issued to SK hynix on May 26 for "Semiconductor device including ferroelectric layer and method of manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,794, issued on May 26, was assigned to SK hynix Inc. (Icheon-si, South Korea).

"Semiconductor device including ferroelectric layer and method of manufacturing the same" was invented by Mir Im (Icheon-si, South Korea) and Jae Gil Lee (Icheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device according to an embodiment includes a substrate, a bit line structure and a source line structure each extending in a direction perpendicular to a surface of the substrate, a semiconductor layer disposed between the bit line structure and the source line structure on a plane parallel to the surface of the substrate, a ferroelectr...