ALEXANDRIA, Va., May 26 -- United States Patent no. 12,641,792, issued on May 26, was assigned to MACRONIX International Co. Ltd. (Hsinchu, Taiwan).

"Method for manufacturing three-dimensional memory device" was invented by Zong-Jie Ko (Kaohsiung City, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present disclosure relates to a method for manufacturing a 3D memory device, and particularly, to a method for manufacturing high capacity and high performance 3D NAND flash memory device. The method includes: alternately stacking sacrificial layers and insulating layers; forming a channel through hole through the sacrificial layers and the insulating layers; lining the channel through hole with an init...