US Patent Issued to Tokyo Electron on April 14 for "Methods for patterning a semiconductor substrate using metalate salt ionic liquid crystals" (Texas Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,682, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods for patterning a semiconductor substrate using metalate sal... Read More

US Patent Issued to FENG CHIA UNIVERSITY, DAH YOUNG VACUUM EQUIPMENT on April 14 for "Semiconductor processing equipment part and method for making the same" (Taiwanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,683, issued on April 14, was assigned to FENG CHIA UNIVERSITY (Taichung, Taiwan) and DAH YOUNG VACUUM EQUIPMENT Co. LTD. (Taichung City, Ta... Read More

US Patent Issued to ASM IP Holding on April 14 for "Method and system for mitigating underlayer damage during formation of patterned structures" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,684, issued on April 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method and system for mitigating underlayer damage du... Read More

US Patent Issued to ASM IP Holding on April 14 for "Method and system for mitigating underlayer damage during formation of patterned structures" (Japanese Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,684, issued on April 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands). "Method and system for mitigating underlayer damage du... Read More

US Patent Issued to Tokyo Electron on April 14 for "Methods for controlling spin-on self-assembled monolayer (SAM) selectivity" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,685, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods for controlling spin-on self-assembled monolayer (SAM) sele... Read More

US Patent Issued to Tokyo Electron on April 14 for "Methods for controlling spin-on self-assembled monolayer (SAM) selectivity" (New York Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,685, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo). "Methods for controlling spin-on self-assembled monolayer (SAM) sele... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor chip and semiconductor package including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,686, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor chip and semiconductor packa... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 14 for "Semiconductor chip and semiconductor package including the same" (South Korean Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,686, issued on April 14, was assigned to SAMSUNG ELECTRONICS Co. LTD. (Suwon-si, South Korea). "Semiconductor chip and semiconductor packa... Read More

US Patent Issued to Destination 2D on April 14 for "Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene" (California, Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,687, issued on April 14, was assigned to Destination 2D Inc. (San Jose, Calif.). "Large-area/wafer-scale CMOS-compatible 2D-material inter... Read More

US Patent Issued to Destination 2D on April 14 for "Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene" (California, Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,687, issued on April 14, was assigned to Destination 2D Inc. (San Jose, Calif.). "Large-area/wafer-scale CMOS-compatible 2D-material inter... Read More

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