ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,684, issued on April 14, was assigned to ASM IP Holding B.V. (Almere, Netherlands).
"Method and system for mitigating underlayer damage during formation of patterned structures" was invented by Eiichiro Shiba (Hachioji, Japan), Tomomi Takayama (Tokyo) and Che Chen Hsu (Tama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "Methods of forming structures suitable for a multiple patterning process are disclosed. Exemplary methods include forming a material overlying the substrate by providing a silicon precursor to the reaction chamber for a silicon precursor pulse period providing one or more of a nitrogen reactant and an oxygen reactant to the r...