US Patent Issued to Tokyo Electron on April 14 for "Methods for patterning a semiconductor substrate using metalate salt ionic liquid crystals" (Texas Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,682, issued on April 14, was assigned to Tokyo Electron Ltd. (Tokyo).

"Methods for patterning a semiconductor substrate using metalate salt ionic liquid crystals" was invented by Kate Abel (Austin, Texas) and Dipak Aryal (Austin, Texas).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments of improved process flows and methods are provided to pattern a semiconductor substrate using direct self-assembly (DSA) of metalate salt ionic liquid crystals (ILCs) having metalate anions. After self-assembly of the metalate salt ILCs into ordered structures, an oxidation process is used to remove the organic components of the ordered structures and convert...