US Patent Issued to Destination 2D on April 14 for "Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene" (California, Oregon Inventors)

ALEXANDRIA, Va., April 15 -- United States Patent no. 12,604,687, issued on April 14, was assigned to Destination 2D Inc. (San Jose, Calif.).

"Large-area/wafer-scale CMOS-compatible 2D-material intercalation doping tools, processes, and methods, including intercalation doping of synthesized and patterned graphene" was invented by Kaustav Banerjee (Goleta, Calif.), Ravi Iyengar (Milpitas, Calif.), Brian Cronquist (Klamath Falls, Ore.) and Satish Sundar (San Jose, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "An intercalation doping apparatus including: a reactor chamber where single or multiple wafers or substrates (SoMWoSubs) are disposed within the reactor chamber, where SOMWoSubs have a diameter or...