US Patent Issued to SK keyfoundry on May 19 for "Manufacturing method of a semiconductor device having high-voltage isolation capacitor" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,152, issued on May 19, was assigned to SK keyfoundry Inc. (Cheongju-si, South Korea). "Manufacturing method of a semiconductor device having... Read More

US Patent Issued to ATOMERA on May 19 for "Methods for making bipolar junction transistors including emitter-base and base-collector superlattices" (Arizona Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,155, issued on May 19, was assigned to ATOMERA Inc. (Los Gatos, Calif.). "Methods for making bipolar junction transistors including emitter-... Read More

US Patent Issued to PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION on May 19 for "Self-aligning process method and self-aligning process apparatus for reducing critical dimension variation of SiC trench gate MOSFET structure" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,156, issued on May 19, was assigned to PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION (Busan, South Korea). "Self-alig... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Method for fabricating semiconductor device" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,157, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea). "Method for fabricating semiconductor device" w... Read More

US Patent Issued to Analog Devices on May 19 for "Gallium nitride superjunction transistor" (Massachusetts Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,158, issued on May 19, was assigned to Analog Devices Inc. (Wilmington, Mass.). "Gallium nitride superjunction transistor" was invented by J... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Stacked multi-gate device with barrier layers" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,159, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Stacked multi-gate device with ba... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Semiconductor device structure" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,160, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device structure" w... Read More

US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 19 for "Method of manufacturing a semiconductor device and a semiconductor device" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,161, issued on May 19, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Method of manufacturing a semicon... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Gate structure of semiconductor device and method of forming same" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,162, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Gate structure of semiconductor devic... Read More

US Patent Issued to Monolithic 3D on May 19 for "Method to produce a 3D multilayer semiconductor device and structure" (American, Israeli Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,163, issued on May 19, was assigned to Monolithic 3D Inc. (Allen, Texas). "Method to produce a 3D multilayer semiconductor device and struct... Read More

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