ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,157, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-Si, South Korea).
"Method for fabricating semiconductor device" was invented by Se Woung Oh (Suwon-si, South Korea), Hyung Dong Kim (Suwon-si, South Korea), Sang Mo Koo (Suwon-si, South Korea), Han Sung Kim (Suwon-si, South Korea) and Young Dae Cho (Suwon-si, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A method for fabricating a semiconductor device includes forming an active pattern on a substrate, forming sacrificial and semiconductor layers alternately stacked on the active pattern, forming a dummy gate and first source/drain trench on one side of the dummy g...