US Patent Issued to PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION on May 19 for "Self-aligning process method and self-aligning process apparatus for reducing critical dimension variation of SiC trench gate MOSFET structure" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,156, issued on May 19, was assigned to PUSAN NATIONAL UNIVERSITY INDUSTRY-UNIVERSITY COOPERATION FOUNDATION (Busan, South Korea).

"Self-aligning process method and self-aligning process apparatus for reducing critical dimension variation of SiC trench gate MOSFET structure" was invented by Ho Jun Lee (Busan, South Korea), Jee Hun Jeong (Cheonan-si, South Korea), Sang Woo Kim (Pohang-si, South Korea), Min Seok Jang (Busan, South Korea) and O Gyun Seok (Busan, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A self-aligning process method and a self-aligning process apparatus for reducing critical dimension variation of a SiC trench gate MOSF...