US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Film-based one-time-programmable memory cells in device metallization layers and back-end of line methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,131, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Film-based one-time-programmable memo... Read More

US Patent Issued to EMEMORY TECHNOLOGY on May 19 for "Antifuse-type non-volatile memory cell" (Taiwanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,132, issued on May 19, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan). "Antifuse-type non-volatile memory cell" was invented by ... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Anti-dishing structure for embedded memory" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,133, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Anti-dishing structure for embedded m... Read More

US Patent Issued to Yangtze Memory Technologies on May 19 for "Memory device and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,134, issued on May 19, was assigned to Yangtze Memory Technologies Co. Ltd. (Wuhan, China). "Memory device and fabrication method thereof" w... Read More

US Patent Issued to Semiconductor Energy Laboratory on May 19 for "Crystalline oxide semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,135, issued on May 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan). "Crystalline oxide semiconductor memory dev... Read More

US Patent Issued to SK hynix on May 19 for "Semiconductor memory device and method of manufacturing semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,136, issued on May 19, was assigned to SK hynix Inc. (Icheon-si, South Korea). "Semiconductor memory device and method of manufacturing semi... Read More

US Patent Issued to YANGTZE MEMORY TECHNOLOGIES on May 19 for "Three-dimensional memory and fabrication method thereof" (Chinese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,137, issued on May 19, was assigned to YANGTZE MEMORY TECHNOLOGIES Co. LTD. (Wuhan, China). "Three-dimensional memory and fabrication method... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Semiconductor devices and data storage systems having a plurality of interconnected peripheral vias" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,138, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor devices and data storage systems... Read More

US Patent Issued to SAMSUNG ELECTRONICS on May 19 for "Semiconductor device and electronic system including the same" (South Korean Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,139, issued on May 19, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Suwon-si, South Korea). "Semiconductor device and electronic system inc... Read More

US Patent Issued to Micron Technology on May 19 for "Electronic devices including isolation structures exhibiting a weave pattern, and related memory devices, systems, and methods" (Idaho Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,140, issued on May 19, was assigned to Micron Technology Inc. (Boise, Idaho). "Electronic devices including isolation structures exhibiting ... Read More

• ««
• «
• 7497
• 7498
• 7499
• 7500
• 7501
• 7502
• 7503
• 7504
• 7505
• 7506
• »
• »»