US Patent Issued to Taiwan Semiconductor Manufacturing on May 19 for "Film-based one-time-programmable memory cells in device metallization layers and back-end of line methods of manufacturing thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,131, issued on May 19, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan).

"Film-based one-time-programmable memory cells in device metallization layers and back-end of line methods of manufacturing thereof" was invented by Meng-Sheng Chang (Hsinchu, Taiwan), Chia-En Huang (Hsinchu, Taiwan) and Yih Wang (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A memory device includes an array having a plurality of one-time-programmable (OTP) memory cells on a side of a substrate, a plurality of word lines (WLs), a plurality of bit lines (BLs), and a plurality of control gate (CG) lines. Each of the OTP memory cells i...