US Patent Issued to Micron Technology on May 19 for "Electronic devices including isolation structures exhibiting a weave pattern, and related memory devices, systems, and methods" (Idaho Inventors)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,140, issued on May 19, was assigned to Micron Technology Inc. (Boise, Idaho).

"Electronic devices including isolation structures exhibiting a weave pattern, and related memory devices, systems, and methods" was invented by Sidhartha Gupta (Boise, Idaho), Matthew J. King (Boise, Idaho), Jiewei Chen (Meridian, Idaho) and Yi Hu (Boise, Idaho).

According to the abstract* released by the U.S. Patent & Trademark Office: "An electronic device comprises a stack comprising tiers of alternating conductive structures and insulative structures adjacent to a source, and strings of memory cells extending vertically through the stack. The strings of memory cells individually comprising a channel...