US Patent Issued to EMEMORY TECHNOLOGY on May 19 for "Antifuse-type non-volatile memory cell" (Taiwanese Inventor)

ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,132, issued on May 19, was assigned to EMEMORY TECHNOLOGY INC. (Hsin-Chu, Taiwan).

"Antifuse-type non-volatile memory cell" was invented by Yi-Hung Li (Hsinchu County, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An antifuse-type non-volatile memory cell includes a select transistor, a following transistor and a capacitor. The first drain/source terminal of the select transistor is connected with a bit line. The gate terminal of the select transistor is connected with a word line. A first drain/source terminal of the following transistor is connected with a second drain/source terminal of the select transistor. A gate terminal of the followi...