ALEXANDRIA, Va., May 19 -- United States Patent no. 12,635,135, issued on May 19, was assigned to Semiconductor Energy Laboratory Co. Ltd. (Atsugi, Japan).
"Crystalline oxide semiconductor memory device" was invented by Hitoshi Kunitake (Isehara, Japan), Yuki Ito (Nagoya, Japan) and Shunpei Yamazaki (Setagaya, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A novel semiconductor device is provided. The semiconductor device includes an oxide semiconductor as a first semiconductor, silicon as a second semiconductor, and a plurality of memory cells lined up in a first direction; and a memory cell includes a writing transistor and a reading transistor. The first semiconductor and the second semiconductor ex...