US Patent Issued to SAMSUNG ELECTRONICS on June 16 for "Semiconductor device including recessed sidewall" (South Korean Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,265, issued on June 16, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Semiconductor device including recessed s... Read More

US Patent Issued to Taiwan Semiconductor Manufacturing on June 16 for "Profile control of epitaxial structures in semiconductor devices" (Taiwanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,266, issued on June 16, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Profile control of epitaxial struct... Read More

US Patent Issued to Mitsubishi Electric on June 16 for "Semiconductor device comprising first buffer layer and second buffer layer wherein a kurtosis of a peak of an impurity concentration of the second buffer layer is lower than a kurtosis of a peak of an impurity concentration of the first buffer layer, and method of manufacturing the semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,267, issued on June 16, was assigned to Mitsubishi Electric Corp. (Tokyo). "Semiconductor device comprising first buffer layer and second b... Read More

US Patent Issued to PROTERIAL on June 16 for "Silicon carbide substrate including multiple semiconductor layers having a high break down voltage" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,268, issued on June 16, was assigned to PROTERIAL LTD. (Tokyo). "Silicon carbide substrate including multiple semiconductor layers having a... Read More

US Patent Issued to ThinSiC on June 16 for "Hetero epitaxial structure and method therefor" (California, Arizona Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,269, issued on June 16, was assigned to ThinSiC Inc. (Santa Clara, Calif.). "Hetero epitaxial structure and method therefor" was invented b... Read More

US Patent Issued to Infineon Technologies on June 16 for "Wide band gap semiconductor device and manufacturing method" (German, Austrian Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,270, issued on June 16, was assigned to Infineon Technologies AG (Neubiberg, Germany). "Wide band gap semiconductor device and manufacturin... Read More

US Patent Issued to Applied Materials on June 16 for "Method of reducing metal gate resistance for next generation NMOS device application" (California Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,271, issued on June 16, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Method of reducing metal gate resistance for next ge... Read More

US Patent Issued to Intel on June 16 for "Selective gate oxide formation on 2D material based transistor devices" (Oregon Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,272, issued on June 16, was assigned to Intel Corp. (Santa Clara, Calif.). "Selective gate oxide formation on 2D material based transistor ... Read More

US Patent Issued to Renesas Electronics on June 16 for "Method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,273, issued on June 16, was assigned to Renesas Electronics Corp. (Tokyo). "Method of manufacturing semiconductor device" was invented by Y... Read More

US Patent Issued to FUJI ELECTRIC on June 16 for "Silicon carbide semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,274, issued on June 16, was assigned to FUJI ELECTRIC Co. LTD. (Kawasaki, Japan). "Silicon carbide semiconductor device and method of manuf... Read More

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