US Patent Issued to Infineon Technologies on June 16 for "Wide band gap semiconductor device and manufacturing method" (German, Austrian Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,270, issued on June 16, was assigned to Infineon Technologies AG (Neubiberg, Germany).

"Wide band gap semiconductor device and manufacturing method" was invented by Hans-Joachim Schulze (Taufkirchen, Germany), Rudolf Elpelt (Erlangen, Germany), Jens Peter Konrath (Villach, Austria) and Konrad Schraml (Feldkirchen, Germany).

According to the abstract* released by the U.S. Patent & Trademark Office: "A wide band gap semiconductor device includes a semiconductor body having a first surface and a second surface opposite to the first surface along a vertical direction. The semiconductor device further includes a first region of a first conductivity type adjoining at least partially th...