US Patent Issued to Mitsubishi Electric on June 16 for "Semiconductor device comprising first buffer layer and second buffer layer wherein a kurtosis of a peak of an impurity concentration of the second buffer layer is lower than a kurtosis of a peak of an impurity concentration of the first buffer layer, and method of manufacturing the semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,267, issued on June 16, was assigned to Mitsubishi Electric Corp. (Tokyo).

"Semiconductor device comprising first buffer layer and second buffer layer wherein a kurtosis of a peak of an impurity concentration of the second buffer layer is lower than a kurtosis of a peak of an impurity concentration of the first buffer layer, and method of manufacturing the semiconductor device" was invented by Koji Tanaka (Tokyo), Koichi Nishi (Tokyo) and Kakeru Otsuka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a semiconductor substrate having a drift layer of a first conductivity type and a collector layer of a second cond...