ALEXANDRIA, Va., June 16 -- United States Patent no. 12,660,269, issued on June 16, was assigned to ThinSiC Inc. (Santa Clara, Calif.).
"Hetero epitaxial structure and method therefor" was invented by Tirunelveli Subramaniam Ravi (San Jose, Calif.), Jinho Seo (Saratoga, Calif.) and Bishnu Prasanna Gogoi (Scottsdale, Ariz.).
According to the abstract* released by the U.S. Patent & Trademark Office: "A heterogeneous epitaxial structure formed on a SiC (silicon carbide) substrate. An intermediate layer comprising AlN is formed overlying the SiC substrate. The surface of the intermediate layer comprises AlN formed by lateral epitaxial growth. The lateral epitaxial growth merges to form the surface comprising a MELO layer (merged epitaxial lat...