US Patent Issued to NANYA TECHNOLOGY on April 21 for "Semiconductor structure including a bit line structure and method of manufacturing the same" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,535, issued on April 21, was assigned to NANYA TECHNOLOGY Corp. (New Taipei City, Taiwan). "Semiconductor structure including a bit line s... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and fabrication method" (Chinese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,536, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and fabrication m... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure with buffer layer between conductive contact and word line and method for forming the same, and memory" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,537, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure with buffer layer... Read More

US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,538, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for fo... Read More

US Patent Issued to ICLEAGUE TECHNOLOGY on April 21 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,539, issued on April 21, was assigned to ICLEAGUE TECHNOLOGY Co. LTD. (Jiaxing, China). "Semiconductor structure and method for forming se... Read More

US Patent Issued to CHENGDU PBM TECHNOLOGY on April 21 for "Methods of manufacturing 3D programmable memory devices" (California Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,540, issued on April 21, was assigned to CHENGDU PBM TECHNOLOGY LTD. (Chengdu, China). "Methods of manufacturing 3D programmable memory de... Read More

US Patent Issued to United Microelectronics on April 21 for "One-time programmable memory structure" (Taiwanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,541, issued on April 21, was assigned to United Microelectronics Corp. (Hsinchu, Taiwan). "One-time programmable memory structure" was inv... Read More

US Patent Issued to Kioxia on April 21 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,542, issued on April 21, was assigned to Kioxia Corp. (Tokyo). "Semiconductor memory device" was invented by Ryo Fukuoka (Yokkaichi, Japan... Read More

US Patent Issued to FS-SEMI SEMICONDUCTOR on April 21 for "Self-aligned floating gate formation in nonvolatile memory device fabrication" (Taiwanese Inventor)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,543, issued on April 21, was assigned to FS-SEMI SEMICONDUCTOR Corp. LTD. (Hukou Township, Hsinchu County, Taiwan). "Self-aligned floating... Read More

US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Three-dimensional semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,545, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Three-dimensional semiconductor memory ... Read More

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