US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure with buffer layer between conductive contact and word line and method for forming the same, and memory" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,537, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure with buffer layer between conductive contact and word line and method for forming the same, and memory" was invented by Yu-Cheng Liao (Hefei City, China) and Muyu Chen (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "The disclosure relates to the field of semiconductor technologies, and to a semiconductor structure and a method for forming the same, and a memory. The semiconductor structure of the disclosure includes a substrate, a word line structure, a conductive contact structure and a buffer layer. The substr...