US Patent Issued to CHANGXIN MEMORY TECHNOLOGIES on April 21 for "Semiconductor structure and method for forming semiconductor structure" (Chinese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,538, issued on April 21, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China).

"Semiconductor structure and method for forming semiconductor structure" was invented by Youming Liu (Hefei City, China) and Deyuan Xiao (Hefei City, China).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor structure includes a substrate and multiple word lines located on a top surface of the substrate. Each of the word lines extends in a direction parallel to the top surface of the substrate. The multiple word lines are arranged at intervals in a direction perpendicular to the top surface of the substrate. Any two adjacent word lines are at ...