US Patent Issued to Kioxia on April 21 for "Semiconductor memory device" (Japanese Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,542, issued on April 21, was assigned to Kioxia Corp. (Tokyo).

"Semiconductor memory device" was invented by Ryo Fukuoka (Yokkaichi, Japan), Fumitaka Arai (Yokkaichi, Japan), Kouji Matsuo (Ama, Japan), Hiroaki Kosako (Yokkaichi, Japan), Keiji Hosotani (Yokkaichi, Japan), Takayuki Kakegawa (Yokkaichi, Japan), Shinya Naito (Toyota, Japan) and Shinji Mori (Nagoya, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device includes a first semiconductor layer, first conductive layers, electric charge accumulating portions, a first conductivity-typed second semiconductor layer, a first wiring, a second conductivity-typed third se...