US Patent Issued to SAMSUNG ELECTRONICS on April 21 for "Three-dimensional semiconductor memory device" (South Korean Inventors)

ALEXANDRIA, Va., April 21 -- United States Patent no. 12,610,545, issued on April 21, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea).

"Three-dimensional semiconductor memory device" was invented by Ji-Hoon Choi (Seongnam-si, South Korea), Sangmin Kang (Hwaseong-si, South Korea) and Siyeong Yang (Suwon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor memory device is disclosed. The device may include an electrode structure including electrodes, the electrodes stacked on a substrate, a source semiconductor layer between the substrate and the electrode structure, and a vertical channel structure penetrating the electrode structure. The vertical channel stru...