US Patent Issued to Tokyo Electron on May 5 for "Substrate processing apparatus and substrate processing method" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,142, issued on May 5, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing apparatus and substrate processing method" was inven... Read More

US Patent Issued on May 5 for "Vacuum coating apparatus for uniformly distributing metal vapor using uniform mixing buffer structure" (Chinese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,143, issued on May 5. "Vacuum coating apparatus for uniformly distributing metal vapor using uniform mixing buffer structure" was invented by... Read More

US Patent Issued to Applied Materials on May 5 for "Surface treatment for selective deposition" (California Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,144, issued on May 5, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Surface treatment for selective deposition" was invented... Read More

US Patent Issued to Tokyo Electron on May 5 for "Film-forming method and film-forming apparatus" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,145, issued on May 5, was assigned to Tokyo Electron Ltd. (Tokyo). "Film-forming method and film-forming apparatus" was invented by Takashi C... Read More

US Patent Issued to The University of Hong Kong on May 5 for "System and method for forming large-area electronic-grade metal chalcogen thin films" (Chinese, Taiwanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,146, issued on May 5, was assigned to The University of Hong Kong (China). "System and method for forming large-area electronic-grade metal c... Read More

US Patent Issued to Applied Materials on May 5 for "Methods for depositing phosphorus-doped silicon nitride films" (California Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,147, issued on May 5, was assigned to Applied Materials Inc. (Santa Clara, Calif.). "Methods for depositing phosphorus-doped silicon nitride ... Read More

US Patent Issued to Tokyo Electron on May 5 for "Deposition method and deposition apparatus" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,148, issued on May 5, was assigned to Tokyo Electron Ltd. (Tokyo). "Deposition method and deposition apparatus" was invented by Muneyuki Otan... Read More

US Patent Issued to Kokusai Electric on May 5 for "Cleaning method, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,149, issued on May 5, was assigned to Kokusai Electric Corp. (Tokyo). "Cleaning method, method of manufacturing semiconductor device, substra... Read More

US Patent Issued to SAFRAN CERAMICS on May 5 for "Device for chemical vapour deposition" (French Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,150, issued on May 5, was assigned to SAFRAN CERAMICS (Le Haillan, France). "Device for chemical vapour deposition" was invented by Arnaud De... Read More

US Patent Issued to Tokyo Electron on May 5 for "Substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,151, issued on May 5, was assigned to Tokyo Electron Ltd. (Tokyo). "Substrate processing apparatus" was invented by Kuniyasu Sakashita (Oshu,... Read More

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