ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,145, issued on May 5, was assigned to Tokyo Electron Ltd. (Tokyo).
"Film-forming method and film-forming apparatus" was invented by Takashi Chiba (Iwate, Japan) and Sayaka Saijo (Iwate, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "A film-forming method includes (a) supplying an aminosilane-based gas to a recess formed at a substrate and adsorbing the aminosilane-based gas to an inner surface of the recess, (b) supplying an oxidizing gas to the recess to which the aminosilane-based gas is adsorbed and reacting the aminosilane-based gas with the oxidizing gas, (c) exposing the substrate to a plasma generated from a modification gas, and (d) repe...