US Patent Issued to Applied Materials on May 5 for "Methods for depositing phosphorus-doped silicon nitride films" (California Inventors)

ALEXANDRIA, Va., May 5 -- United States Patent no. 12,618,147, issued on May 5, was assigned to Applied Materials Inc. (Santa Clara, Calif.).

"Methods for depositing phosphorus-doped silicon nitride films" was invented by Kesong Hu (Pleasanton, Calif.), Rana Howlader (San Jose, Calif.), Michael Wenyoung Tsiang (Fremont, Calif.), Xinhai Han (Santa Clara, Calif.), Hang Yu (Woodland, Calif.) and Deenesh Padhi (Sunnyvale, Calif.).

According to the abstract* released by the U.S. Patent & Trademark Office: "Methods for depositing hardmask materials and films, and more specifically, for depositing phosphorus-doped, silicon nitride films are provided. A method of depositing a material on a substrate in a processing chamber includes exposing a sub...