ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,782, issued on April 7, was assigned to IceMOS Technology Ltd. (Great Britain). "Super-junction MOSFET/IGBT with MEMS layer transfer and WB... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,783, issued on April 7, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING Co. LTD. (Hsinchu, Taiwan). "Reducing parasitic capacitance in s... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,784, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Semiconductor device having doped g... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,785, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "Semiconductor devices and methods ... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,786, issued on April 7, was assigned to Adeia Semiconductor Solutions LLC (San Jose, Calif.). "Field effect transistor structures" was inve... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,787, issued on April 7, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsinchu, Taiwan). "Field effect transistor with dual l... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,788, issued on April 7, was assigned to Tokyo Electron Ltd. (Tokyo). "Method to form silicon-germanium nanosheet structures" was invented b... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,789, issued on April 7, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Self-aligned backside contact" was invented ... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,791, issued on April 7, was assigned to BEIJING SUPERSTRING ACADEMY OF MEMORY TECHNOLOGY (Beijing) and INSTITUTE OF MICROELECTRONICS, CHINES... Read More
ALEXANDRIA, Va., April 7 -- United States Patent no. 12,598,792, issued on April 7, was assigned to CHANGXIN MEMORY TECHNOLOGIES INC. (Hefei City, China). "Semiconductor structure and method for manu... Read More