ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,406, issued on May 12, was assigned to Taiwan Semiconductor Manufacturing Co. Ltd. (Hsin-Chu, Taiwan). "Performance optimization by sizing g... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,407, issued on May 12, was assigned to XIAMEN SAN'AN INTEGRATED CIRCUIT Co. LTD. (Xiamen, China). "Radio frequency device and radio frequenc... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,408, issued on May 12, was assigned to Renesas Electronics Corp. (Tokyo). "Metal film and manufacturing method of the metal film, and semico... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,410, issued on May 12, was assigned to International Business Machines Corp. (Armonk, N.Y.). "Non-shared metal gate integration for scaled g... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,411, issued on May 12, was assigned to Tokyo Electron Ltd. (Tokyo). "Method of forming confined growth S/D contact defined by sidewall const... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,413, issued on May 12, was assigned to Vanguard International Semiconductor Corp. (Hsinchu, Taiwan). "Semiconductor device" was invented by ... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,414, issued on May 12, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.). "Semiconductor device including diffusion break structure an... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,415, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Post-replacement metal gate (RMG) gate cut for performance enhanced FinFE... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,416, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan). "Semiconductor device and manufact... Read More
ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,417, issued on May 12, was assigned to QUALCOMM Inc. (San Diego). "Three-dimensional (3D) field effect transistors (FETs) with gate cuts to ... Read More