US Patent Issued to QUALCOMM on May 12 for "Post-replacement metal gate (RMG) gate cut for performance enhanced FinFET" (American, Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,415, issued on May 12, was assigned to QUALCOMM Inc. (San Diego).

"Post-replacement metal gate (RMG) gate cut for performance enhanced FinFET" was invented by Ming-Huei Lin (New Taipei, Taiwan), Haining Yang (San Diego) and Junjing Bao (San Diego).

According to the abstract* released by the U.S. Patent & Trademark Office: "A fin field effect transistor (FinFET) is described. The FinFET includes a substrate and a shallow trench isolation (STI) region on the substrate. The FinFET also includes a first fin structure on the substrate and extending through the STI region. The FinFET further includes a second fin structure on the substrate and extending through the STI region. The FinFE...