US Patent Issued to GLOBALFOUNDRIES U.S. on May 12 for "Semiconductor device including diffusion break structure and method of forming semiconductor device" (New York Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,414, issued on May 12, was assigned to GLOBALFOUNDRIES U.S. Inc. (Malta, N.Y.).

"Semiconductor device including diffusion break structure and method of forming semiconductor device" was invented by Anton Tokranov (Halfmoon, N.Y.), Man Gu (Malta, N.Y.), Eric Scott Kozarsky (Gansevoort, N.Y.), George Mulfinger (Queensbury, N.Y.) and Hong Yu (Rexford, N.Y.).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes an insulating layer, a first semiconductor layer over the insulating layer, a diffusion break structure between a first active region and a second active region and including a first insulating pattern over the insulating l...