US Patent Issued to TAIWAN SEMICONDUCTOR MANUFACTURING on May 12 for "Semiconductor device and manufacturing method thereof" (Taiwanese Inventors)

ALEXANDRIA, Va., May 12 -- United States Patent no. 12,628,416, issued on May 12, was assigned to TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. (Hsinchu, Taiwan).

"Semiconductor device and manufacturing method thereof" was invented by Hung-Yu Yen (Hsinchu, Taiwan) and Keng-Chu Lin (Hsinchu, Taiwan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a substrate, a plurality of active structures, a trench, a lower epitaxy, an upper epitaxy and a bottom barrier portion. The active structures are formed on the substrate and arranged in a first direction. The trench passes through adjacent two of the active structures in a second direction and has a bottom recess. The lower epitaxy is...